Raman and Time resolved photoluminescence studies on the effect of temperature on disorder production in SHI irradiated N-doped 6H-SiC crystals
In this report, the effect of disorder accumulation in Swift Heavy Ion (SHI) irradiated 6H-SiC is distinguished with respect to the irradiation temperature, viz., 80 K and 300 K. The samples were irradiated with 150 MeV Ag12+ ions with different fluences ranging from 1 × 10
12 to 5 × 10
13 ions/cm
2. The structural and optical properties of N-doped 6H-SiC in its pristine condition and after SHI irradiation have been studied. The changes observed by Raman spectroscopy and Time resolved photoluminescence (TRPL) spectroscopy were ascribed to the disorder accumulation in 6H-SiC. The local disorder has been analysed by studying the LO Raman mode of the irradiated sample in comparison to the pristine sample. The TRPL studies have provided evidence of the formation of radiative centres after irradiation at 80 K.
Highlights
• N doped SiC were irradiated with 150 MeV Ag12+ ions with different fluences ranging from 1 × 1012 to 5 × 1013 ions/cm2 at 300 K and 80 K.
• The local disorder has been analysed by studying the LO Raman mode of the irradiated sample in comparison to the pristine sample.
• The TRPL studies have provided evidence of the formation of radiative centres after irradiation at 80 K.
Source: Journal of Alloys and Compounds
